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ISC0804NLS データシート(PDF) 4 Page - Infineon Technologies AG

部品番号 ISC0804NLS
部品情報  OptiMOSTM5 Power-Transistor, 100 V
PDF  11 Pages
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メーカー  INFINEON [Infineon Technologies AG]
ホームページ  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

ISC0804NLS データシート(HTML) 4 Page - Infineon Technologies AG

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4
OptiMOSTM5Power-Transistor,100V
ISC0804NLS
Rev.2.1,2021-04-01
Final Data Sheet
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Drain-source breakdown voltage
V(BR)DSS
100
-
-
V
VGS=0V,ID=1mA
Gate threshold voltage
VGS(th)
1.1
1.6
2.3
V
VDS=VGS,ID=28µA
Zero gate voltage drain current
IDSS
-
-
0.1
10
1
100
µA
VDS=100V,VGS=0V,Tj=25°C
VDS=100V,VGS=0V,Tj=125°C
Gate-source leakage current
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
-
10.3
13.3
10.9
14.9
m
Ω
VGS=10V,ID=20A
VGS=4.5V,ID=10A
Gate resistance
1)
RG
-
1.3
-
Ω
-
Transconductance
gfs
-
39
-
S
|VDS|
≥2|ID|RDS(on)max,ID=20A
Table5Dynamiccharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Input capacitance
1)
Ciss
-
1200
1600
pF
VGS=0V,VDS=50V,f=1MHz
Output capacitance
1)
Coss
-
200
270
pF
VGS=0V,VDS=50V,f=1MHz
Reverse transfer capacitance
1)
Crss
-
10
13
pF
VGS=0V,VDS=50V,f=1MHz
Turn-on delay time
td(on)
-
6.1
-
ns
VDD=50V,VGS=4.5V,ID=20A,
RG,ext=1.6
Ω
Rise time
tr
-
6.8
-
ns
VDD=50V,VGS=4.5V,ID=20A,
RG,ext=1.6
Ω
Turn-off delay time
td(off)
-
12
-
ns
VDD=50V,VGS=4.5V,ID=20A,
RG,ext=1.6
Ω
Fall time
tf
-
3.0
-
ns
VDD=50V,VGS=4.5V,ID=20A,
RG,ext=1.6
Ω
Table6Gatechargecharacteristics2)
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Gate to source charge
Qgs
-
3.8
-
nC
VDD=50V,ID=20A,VGS=0to4.5V
Gate charge at threshold
Qg(th)
-
2.0
-
nC
VDD=50V,ID=20A,VGS=0to4.5V
Gate to drain charge
Qgd
-
3.3
-
nC
VDD=50V,ID=20A,VGS=0to4.5V
Switching charge
Qsw
-
5.0
-
nC
VDD=50V,ID=20A,VGS=0to4.5V
Gate charge total
1)
Qg
-
9.2
12
nC
VDD=50V,ID=20A,VGS=0to4.5V
Gate plateau voltage
Vplateau
-
3.1
-
V
VDD=50V,ID=20A,VGS=0to4.5V
Gate charge total
1)
Qg
-
18
24
nC
VDD=50V,ID=20A,VGS=0to10V
Output charge
Qoss
-
24
-
nC
VDS=50V,VGS=0V
1) Defined by design. Not subject to production test.
2) See
″Gate charge waveforms″ for parameter definition



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