HSB285S datasheet(1/5 Pages) RENESAS

部品番号	HSB285S

部品情報	SILICON SCHOTTKY BARRIER DIODE FOR HIGH FREQUENCY DETECTION

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メーカー	RENESAS [Renesas Technology Corp]

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1 / 5 page

Rev.1.00, Apr.16.2003, page 1 of 5

HSB285S

Silicon Schottky Barrier Diode for High frequency detection

REJ03G0010-0100Z

Rev.1.00

Apr,16.2003

Features

• Low forward voltage, Low capacitance and High detection sensitivity.

• HSB285S which is interconnected in series configuration. is designed for voltage doubler use.

• CMPAK package is suitable for high density surface mounting and high speed assembly.

Ordering Information

Type No.

Laser Mark

Package Code

HSB285S

S3

CMPAK

Pin Arrangement

1. Cathode 2

2. Anode 1

3. Cathode 1

Anode 2

(Top View)

21

3

同様の部品番号 - HSB285S

メーカー	部品番号	データシート	部品情報
Renesas Technology Corp	HSB285S	55Kb / 5P	Silicon Schottky Barrier Diode for Detector
Renesas Technology Corp	HSB285S	55Kb / 5P	Silicon Schottky Barrier Diode for Detector

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Hitachi Semiconductor	HSB0104YP	27Kb / 5P	Silicon Schottky Barrier Diode for High Speed Switching
KEC(Korea Electronics)	KDR701S	384Kb / 2P	SCHOTTKY BARRIER TYPE DIODE(FOR HIGH FREQUENCY RECTIFICATION)
Renesas Technology Corp	HSU226	44Kb / 5P	Silicon Schottky Barrier Diode for High Speed Switching
	HSC285	46Kb / 5P	SILICON SCHOTTKY BARRIER DIODE FOR HIGH FREQUENCY DETECTION
	HSU285	40Kb / 5P	Silicon Schottky Barrier Diode for High frequency detection
Toshiba Semiconductor	JDH3D01FV	180Kb / 5P	Diode Silicon Epitaxial Schottky Barrier Type For wave detection
Toshiba Semiconductor	JDH3D01S	168Kb / 4P	Diode Silicon Epitaxial Schottky Barrier Type For wave detection
Hitachi Semiconductor	HRW26	20Kb / 2P	Silicon Schottky Barrier Diode for High Frequency Rectifying
Renesas Technology Corp	RKD702KL	66Kb / 5P	Silicon Schottky Barrier Diode for High Speed Switching
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