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M69KB096AB データシート(PDF) 27 Page - STMicroelectronics

部品番号 M69KB096AB
部品情報  64 Mbit (4Mb x 16), 104MHz Clock Rate, 1.8V Supply, Bare Die, Burst PSRAM
PDF  73 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M69KB096AB データシート(HTML) 27 Page - STMicroelectronics

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M69KB096AB
7 Configuration Registers
27/73
Refer to Tables 5 and 7 for a detailed description of Configuration Register Program by the CR
Controlled method and to Figures 22 and 33, showing CR controlled Configuration Register
Program waveforms in asynchronous and synchronous mode.
Table 8.
Register Selection
7.2
Programming and Reading the Registers using the Software
Method
All registers (BCR, RCR, DIDR) can be read by issuing a Read Configuration Register
sequence (see Figure 8: Read Configuration Register (Software Method).
BCR and RCR can be programmed by issuing a Set Configuration Register sequence (see
Figure 7: Set Configuration Register (Software Method).
The timings will be identical to those described in Table 17: Asynchronous Read AC
Characteristics. The Configuration Register Enable input, CR, is ‘don’t care’.
Read Configuration Register and Set Configuration Register sequences both require 4 read
and write cycles. These cycles are performed in asynchronous mode, whatever the device
operating mode:
1.
2 bus read and one bus write cycles to a unique address location, 7FFFFFh, indicate that
the next operation will read or write to a configuration register. The data written during the
third cycle must be ‘0000h’ to access the RCR, ‘0001h’ to access the BCR and ‘0002h’ to
access the DIDR during the next cycle.
2.
The fourth cycle reads from or writes to the configuration register.
The timings for programming and reading the registers by the software method are identical to
the asynchronous write and read timings.
Register
Read or Write Operation
A18
A19
RCR
Read/Write
0
0
BCR
Read/Write
0
1
DIDR
Read-Only
1
X



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