SMA661ASTR datasheet(1/10 Pages) STMICROELECTRONICS

部品番号	SMA661ASTR

部品情報	GPS HIGH GAIN LNA ICs

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October 2005

SMA661AS

GPS HIGH GAIN LNA ICs

Rev. 2

GENERAL FEATURES

■

LOW NOISE FIGURE 1.4 dB @ 1.575 GHz

■

HIGH GAIN 17 dB @ 1.575 GHz

■

POWER DOWN FUNCTION

■

TEMPERATURE COMPENSATED

■

UNCONDITIONALLY STABLE

■

INTEGRATED OUTPUT MATCHING

■

ESD PROTECTION (

± 2kV HBM)

■

70 GHz Silicon Germanium TECHNOLOGY

■

LEAD-FREE STRAIGHT PACKAGE (SOT666)

APPLICATIONS

■

GPS

DESCRIPTION

SMA661AS is a product of the

SMA

Family

(Silicon MMIC Amplifiers), it uses ST state-of-the

art SiGe BiCMOS technology.

The excellent RF performances (17dB Gain and

1.4dB NF at 1.575GHz) and the few external

component counts (just one capacitor) make the

SMA661AS an ideal solution for GPS Low Noise

Amplifier. SMA661AS embeds a power down

function avoiding to use an external switch; in

power down mode (VPD ≤ VPDL ) the current con-

sumption is about 10 nA. It is housed in ultra min-

iature SOT666 plastic

package

(1.65mm x

1.2mm x 1.57mm).

Figure 1. Package

Table 1. Pin Connection

Table 2. Order Codes

Figure 2. Circuit Schematic

Pin No.

Pin Name

1RF IN

2GND

3PD

4RF OUT

5GND

6Vcc

Top View

34

1

2

5

6

SOT666 (Lead-Free)

1.65 x 1.2 x 0.57 mm

Package

Tape and Reel

SOT666

SMA661ASTR

SMA661AS

RF input

RF IN (1)

VCC (6)

GND (2,5)

RF Output

C1

RF OUT(4)

PD (3)

33nF

PRELIMINARY DATA

同様の部品番号 - SMA661ASTR

メーカー	部品番号	データシート	部品情報
STMicroelectronics	SMA661AS	414Kb / 14P	Fully integrated GPS LNA IC 04-Apr-2007
STMicroelectronics	SMA661AS	414Kb / 14P	Fully integrated GPS LNA IC 04-Apr-2007

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