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DA9131 データシート(PDF) 13 Page - Dialog Semiconductor |
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DA9131 データシート(HTML) 13 Page - Dialog Semiconductor |
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13 / 56 page ![]() DA9131 High-Performance, Dual-Channel DC-DC Converter for Mobile and Portable Applications Datasheet Revision 2.0 11-Aug-2021 CFR0011-120-00 13 of 56 © 2021 Dialog Semiconductor Parameter Description Conditions Min Typ Max Unit fSW Switching frequency 4 MHz tON_MIN Minimum turn-on pulse 0 % duty is also supported 5 7 11 ns tBUCK_EN Turn-on time CHx_EN = high 20 μs RPD Output pull-down resistance at the LX node, see CHx_PD_DIS VIN = 3.7 V VOUT = 0.5 V 145 150 161 Ω RON_PMOS On resistance of switching PMOS VIN = 3.7 V 17 25 37 mΩ RON_NMOS On resistance of switching NMOS VIN = 3.7 V 6 10 16 mΩ PWM Mode IQ_PWM Quiescent current VIN = 3.7 V No load 16 mA ηPWM Efficiency VIN = 3.6 V VOUT = 1 V IOUT = 10 % (IMAX) to 80 % (IMAX) 85 % AUTO Mode VOUT_TR_LD Load transient response VOUT = 1 V IOUT = 0 to 5 A at 25 °C ambient dl/dt = 10 A/μs -40 80 mV PFM Mode IQ_PFM Quiescent current in PFM 1-phase VIN = 3.7 V No load No switching 88 μA ηPFM Efficiency VIN = 3.6 V VOUT = 1 V IOUT = 10 mA 80 % Note 1 tON > 40 ns Note 2 For short durations to meet peak current requirements, IOUT can be operated at up to 10 % higher than the specified maximum operating condition. The part should not be operated in this mode for extended periods and is not guaranteed for continuous operation. |
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