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ECH8655R-R-TL-H データシート(PDF) 3 Page - ON Semiconductor |
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ECH8655R-R-TL-H データシート(HTML) 3 Page - ON Semiconductor |
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3 / 7 page ![]() ECH8655R−R−TL−H www.onsemi.com 3 ELECTRICAL CHARACTERISTICS at TA = 25°C Parameter Unit Ratings Conditions Symbol Parameter Unit Max Typ Min Conditions Symbol Total Gate Charge Qg VDS = 10 V, VGS = 10 V, ID = 9 A 16.8 nC Gate−to−Source Charge Qgs 1.6 nC Gate−to−Drain “Miller” Charge Qgd 4.8 nC Diode Forward Voltage VSD IS = 9 A, VGS = 0 V 0.8 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit Figure 2. Switching Time Test Circuit 4.5 V 0 V VIN VIN VDD = 10 V ID = 4.5 A RL= 2.22 W D PW = 10 ms D.C.≤ 1% G Rg P.G 50 W VOUT ECH8655R S Rg= 1 kW ORDERING INFORMATION Device Package Shipping Memo ECH8655R−R−TL−H ECH8 3,000 pcs./reel Pb Free and Halogen Free |
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