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TSOP7000SW1 データシート(PDF) 2 Page - Vaishali Semiconductor

部品番号 TSOP7000SW1
部品情報  IR Receiver for High Data Rate PCM at 455 kHz
PDF  8 Pages
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メーカー  VAISH [Vaishali Semiconductor]
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TSOP7000SW1 データシート(HTML) 2 Page - Vaishali Semiconductor

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2
Document Number 82221
Rev. 1.1, 01-Mar-05
TSOP7000SW1
Vishay Semiconductors
Absolute Maximum Ratings
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Electrical and Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Supply Voltage
Pin 3
VS
- 0.3 to + 6.0
V
Voltage at output to supply
Pin 1
VS - VO
- 0.3 to VS + 0.3
V
Supply Current
Pin 3
IS
5mA
Output Voltage
Pin 1
VO
- 0.3 to + 6.0
V
Output Current
Pin 1
IO
15
mA
Junction Temperature
Tj
100
°C
Storage Temperature Range
Tstg
- 25 to + 85
°C
Operating Temperature Range
Tamb
- 25 to + 85
°C
Soldering Temperature
t
≤ 10 s, 1 mm from case
Tsd
260
°C
Power Consumption
Ptot
30
mW
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Supply Current (Pin 3)
Dark ambient
ISD
2.0
2.7
mA
Ev = 40 klx, sunlight
ISH
2.3
mA
Supply Voltage (Pin 3)
VS
2.755.5
V
Transmission Distance
λ
p= 870 nm, IR Diode
TSHF5400, IF = 300 mA
dmax
20
m
λ
p= 950 nm, IR Diode
TSAL6400, IF = 300 mA
dmax
12
m
Threshold Irradiance
λ
p = 870 nm,
optical test signal of Fig.1
Ee min
0.8
1.5
mW/m2
Maximum Irradiance
Optical test signal of Fig.1
Ee max
30
W/m2
Output Voltage Low (Pin 1)
1 k
Ω external pull up resistor
VQL
100
mV
Output Voltage High (Pin 1)
No external pull-up resistor
VQH
VS - 0.25
V
Bandpassfilter quality
Q
10
Out-Pulse width tolerance
Optical test signal of Fig.1,
1.5 mW/m2
≤ E
e ≤ 30 W/m
2
∆
tpo
- 15
+ 5
+ 15
µs
Delay time of output pulse
Optical test signal of Fig.1,
Ee > 1.5 mW/m
2
tdon
15
36
µs
Receiver start up time
Valid data after power on
tV
50
µs
Falling time
Leading edge of output pulse
tf
0.4
µs
Rise time
No external pull up resistor
tr
12
µs
1 k
Ω external pull up resistor
tr
1.2
µs
Directivity
Angle of half transmission
distance
ϕ
1/2
± 45
deg



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