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MPXV4115VC6U データシート(PDF) 4 Page - Freescale Semiconductor, Inc

部品番号 MPXV4115VC6U
部品情報  Integrated Silicon Pressure Sensor On-Chip Signal Conditioned,
PDF  8 Pages
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メーカー  FREESCALE [Freescale Semiconductor, Inc]
ホームページ  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MPXV4115VC6U データシート(HTML) 4 Page - Freescale Semiconductor, Inc

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MPXV4115V
Sensors
4
Freescale Semiconductor
ON-CHIP TEMPERATURE COMPENSATION, CALIBRATION, AND SIGNAL CONDITIONING
The performance over temperature is achieved by
integrating the shear-stress strain gauge, temperature
compensation, calibration and signal conditioning circuitry
onto a single monolithic chip.
Figure 2 illustrates the gauge configuration in the basic
chip carrier (Case 482). A fluorosilicone gel isolates the die
surface and wire bonds from the environment, while allowing
the pressure signal to be transmitted to the silicon diaphragm.
The MPXV4115V series sensor operating characteristics
are based on use of dry air as pressure media. Media, other
than dry air, may have adverse effects on sensor
performance and long-term reliability. Internal reliability and
qualification test for dry air, and other media, are available
from the factory. Contact the factory for information regarding
media tolerance in your application.
Figure 3 shows the recommended decoupling circuit for
interfacing the output of the integrated sensor to the A/D input
of a microprocessor or microcontroller. Proper decoupling of
the power supply is recommended.
Figure 4 shows the sensor output signal relative to
differential pressure input. Typical, minimum and maximum
output curves are shown for operation over a temperature
range of 0
°C to 85°C using the decoupling circuit shown in
Figure 3. The output will saturate outside of the specified
pressure range.
Figure 2. Cross-Sectional Diagram
(not to scale)
Figure 3. Recommended Power Supply Decoupling
and Output Filtering
(For additional output filtering, please refer to
Application Note AN1646.)
Figure 4. Applied Vacuum in kPa
(below atmospheric pressure)
Differential Sensing Element
P2
Wire Bond
Stainless
Steel Cap
Thermoplastic
Case
Die Bond
Lead
Frame
Die
Fluorosilicone
Gel Die Coat
P1
+5 V
1.0
µF
0.01
µF
470 pF
GND
Vs
Vout
IPS
OUTPUT
–115
–95
–75
–55
–35
–15
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Vout vs. Vacuum
TRANSFER FUNCTION MPXV4115V
Transfer Function:
Vout = Vs*[(0.007652*P) + 0.92] ± Pressure error
*Temp Factor*0.007652*VS)
VS = 5.0 V ± 0.25 Vdc
TEMP = 0-85°C
MIN
MAX



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