FDMD8430 datasheet(2/8 Pages) ONSEMI

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FDMD8430

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Table 1. MOSFET MAXIMUM RATINGS TA = 25°C unless otherwise noted.

Symbol

Parameter

Rating

Units

VDS

Drain to Source Voltage

VGS

Gate to Source Voltage

±20

Drain Current −Continuous

TC = 25°C (Note 1)

Drain Current − Continuous

TC = 100°C (Note 1)

Drain Current − Continuous

TA = 25°C (Figure 1)

Drain Current − Pulsed

(Note 2)

562

EAS

Single Pulse Avalanche Energy

(Note 3)

Power Dissipation

TC = 25°C

Power Dissipation

TA = 25°C (Figure 1)

2.1

TJ, TSTG

Operating and Storage Junction Temperature Range

−55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro−

mechanical application board design.

2. Pulse Id refers to Figure 13 Forward Bias Safe Operating Area.

3. EAS of 96 mJ is based on starting TJ = 25°C; L = 0.3 mH, IAS = 31.7 A, VDD = 27 V.

a. 60 °C/W when mounted on

a 1 in

pad of 2 oz copper

b.160 °C/W when mounted on

a minimum pad of 2 oz copper

Figure 1.

Figure 2.

Table 2. THERMAL CHARACTERISTICS

RqJC

Thermal Resistance, Junction to Case

4.7

°C/W

RqJA

Thermal Resistance, Junction to Ambient

(Figure 1)

4. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material, RqCA is determined

by the user’s board design.

Table 3. PACKAGE MARKING AND ORDERING INFORMATION

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDMD8430

Power 3.3 x 5

13″

12 mm

3000 units

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