The following table lists the dynamic characteristics per SiC MOSFET of the MSCSM170TAM45CT3AG device.

Table 1-3. Dynamic Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Input capacitance

f = 1 MHz

—

3300

—

pF

Output capacitance

—

150

—

Reverse transfer

capacitance

—

10

—

Total gate charge

—

178

—

nC

Gate-source charge

—

49

—

Gate-drain charge

—

27

—

Turn-on delay time

—

24

—

ns

Rise time

—

17

—

Turn-off delay time

—

35

—

Fall time

19

—

Turn-on energy

1.1

—

mJ

Turn-off energy

0.16

—

Internal gate resistance

—

0.85

—

Ω

Junction-to-case thermal resistance

—

—

0.47

°C/W

The following table lists the body diode ratings and characteristics per SiC MOSFET of the

MSCSM170TAM45CT3AG device.

Table 1-4. Body Diode Ratings and Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

Diode forward voltage

—

3.7

—

V

—

3.9

—

Reverse recovery time

—

27

—

ns

Reverse recovery charge

—

650

—

nC

Reverse recovery current

—

46

—

A

MSCSM170TAM45CT3AG

Electrical Specifications

Datasheet

DS00003966A-page 4