MSC010SDA070B datasheet(2/12 Pages) MICROCHIP

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Device Specifications

This section shows the specifications of the MSC010SDA070B device.

1.1

Absolute Maximum Ratings

The following table shows the absolute maximum ratings of the MSC010SDA070B device. TC = 25 °C unless

otherwise specified.

Table 1-1. Absolute Maximum Ratings

Symbol

Parameter

Ratings

Unit

Maximum DC reverse voltage

700

VRRM

Maximum peak repetitive reverse voltage

VRWM

Maximum working peak reverse voltage

Maximum DC forward current

TC = 25 °C

TC = 135 °C 10

TC = 145 °C 8

IFRM

Repetitive peak forward surge current (TC = 25 °C, tp = 8.3 ms, half

sine wave)

IFSM

Non-repetitive forward surge current (TC = 25 °C, tp = 8.3 ms, half

sine wave)

PTOT

Total power dissipation

TC = 25 °C

TC = 110 °C 36

EAS

Single-pulse avalanche energy (starting TJ = 25 °C,

peak IL = 10 A)

100

The following table shows the thermal and mechanical characteristics of the MSC010SDA070B device.

Table 1-2. Thermal and Mechanical Characteristics

Symbol

Characteristic/Test Conditions

Min

Typ

Max

Unit

RθJC

Junction-to-case thermal resistance

1.30

1.80

°C/W

TJ, TSTG

Operating junction and storage temperature

range

–55

175

°C

Lead temperature for 10 seconds

300

Package weight

0.22

6.2

MSC010SDA070B

Device Specifications

Datasheet

DS-00003878A-page 2

MSC010SDA070B データシート(PDF) 2 Page - Microchip Technology

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