MSCSM70HM05CAG datasheet(3/16 Pages) MICROCHIP

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Electrical Specifications

This section provides the electrical specifications of the MSCSM70HM05CAG device.

1.1

SiC MOSFET Characteristics

The following table lists the absolute maximum ratings per SiC MOSFET of the MSCSM70HM05CAG device.

Table 1-1. Absolute Maximum Ratings

Symbol

Parameter

Maximum Ratings

Unit

VDSS

Drain-Source voltage

700

Continuous

drain current

TC = 25 °C

349

TC = 80 °C

278

IDM

Pulsed drain current

700

VGS

Gate-Source voltage

–10/25

RDS(on)

Drain-Source ON resistance

6.4

mΩ

Power

dissipation

TC = 25 °C

966

The following table lists the electrical characteristics per SiC MOSFET of the MSCSM70HM05CAG device.

Table 1-2. Electrical Characteristics

Symbol

Characteristics Test Conditions

Min

Typ

Max

Unit

IDSS

Zero gate

voltage drain

current

VGS = 0 V; VDS = 700 V

—

300

µA

RDS(on)

Drain–Source

on resistance

VGS = 20 V

ID = 120 A

TJ = 25 °C

—

6.4

mΩ

TJ = 175 °C

6.3

VGS(th)

Gate threshold

voltage

VGS = VDS, ID = 12 mA

1.9

2.4

—

IGSS

Gate–Source

leakage current

VGS = 20 V, VDS = 0 V

—

300

MSCSM70HM05CAG

Electrical Specifications

Datasheet

DS00003927A-page 3

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