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EDB8164B4PR-1DATF-R データシート(PDF) 117 Page - Micron Technology

部品番号 EDB8164B4PR-1DATF-R
部品情報  216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
PDF  152 Pages
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メーカー  MICRON [Micron Technology]
ホームページ  http://www.micron.com
Logo MICRON - Micron Technology

EDB8164B4PR-1DATF-R データシート(HTML) 117 Page - Micron Technology

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Table 76: Single-Ended AC and DC Output Levels (Continued)
Symbol
Parameter
Value
Unit Notes
MMpupd
Delta output impedance between pull-up and pull-
down for DQ/DM
MIN
–15
%
MAX
+15
%
Notes:
1. IOH = –0.1mA.
2. IOL = 0.1mA.
Table 77: Differential AC and DC Output Levels
Symbol
Parameter
Value
Unit
VOHdiff(AC) AC differential output HIGH measurement level (for output SR)
+ 0.2 x VDDQ
V
VOLdiff(AC)
AC differential output LOW measurement level (for output SR)
- 0.2 x VDDQ
V
Single-Ended Output Slew Rate
With the reference load for timing measurements, the output slew rate for falling and
rising edges is defined and measured between VOL(AC) and VOH(AC) for single-ended
signals.
Table 78: Single-Ended Output Slew Rate Definition
Description
Measured
Defined by
From
To
Single-ended output slew rate for rising edge
VOL(AC)
VOH(AC)
[VOH(AC) - VOL(AC)ΔTRSE
Single-ended output slew rate for falling edge
VOH(AC)
VOL(AC)
[VOH(AC) - VOL(AC)ΔTFSE
Note:
1. Output slew rate is verified by design and characterization and may not be subject to
production testing.
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM
Output Characteristics and Operating Conditions
09005aef85eb530a
216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN
117
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.



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