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EDB8164B4PR-1DATF-R データシート(PDF) 119 Page - Micron Technology

部品番号 EDB8164B4PR-1DATF-R
部品情報  216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
PDF  152 Pages
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メーカー  MICRON [Micron Technology]
ホームページ  http://www.micron.com
Logo MICRON - Micron Technology

EDB8164B4PR-1DATF-R データシート(HTML) 119 Page - Micron Technology

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Table 80: Differential Output Slew Rate Definition
Description
Measured
Defined by
From
To
Differential output slew rate for rising edge
VOL,diff(AC)
VOH,diff(AC)
[VOH,diff(AC) - VOL,diff(AC)ΔTRdiff
Differential output slew rate for falling edge
VOH,diff(AC)
VOL,diff(AC)
[VOH,diff(AC) - VOL,diff(AC)ΔTFdiff
Note:
1. Output slew rate is verified by design and characterization and may not be subject to
production testing.
Figure 77: Differential Output Slew Rate Definition
V
OH,diff(AC)
0
V
OL,diff(AC)
Time
∆TF
diff
∆TR
diff
Table 81: Differential Output Slew Rate
Parameter
Symbol
Value
Unit
Min
Max
Differential output slew rate (output impedance = 40
Ω 
SRQdiff
3.0
7.0
V/ns
Differential output slew rate (output impedance = 60
Ω 
SRQdiff
2.0
5.0
V/ns
Notes:
1. Definitions: SR = slew rate; Q = output (similar to DQ = data-in, data-out); SE = single-
ended signals.
2. Measured with output reference load.
3. The output slew rate for falling and rising edges is defined and measured between
VOL(AC) and VOH(AC).
4. Slew rates are measured under typical simultaneous switching output (SSO) conditions,
with one-half of DQ signals per data byte driving HIGH and one-half of DQ signals per
data byte driving LOW.
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM
Output Characteristics and Operating Conditions
09005aef85eb530a
216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN
119
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.



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