STM32G070RB datasheet(57/93 Pages) STMICROELECTRONICS

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DS12766 Rev 2

57/93

STM32G070CB/KB/RB

Electrical characteristics

Low-speed internal (LSI) RC oscillator

5.3.9

PLL characteristics

The parameters given in Table 39 are derived from tests performed under temperature and

VDD supply voltage conditions summarized in Table 20: General operating conditions.

tstab(HSI16)(2)

HSI16 oscillator stabilization time

μs

IDD(HSI16)(2)

HSI16 oscillator power consumption

155

190

μA

1. Based on characterization results, not tested in production.

2. Guaranteed by design.

Table 37. HSI16 oscillator characteristics(1) (continued)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Table 38. LSI oscillator characteristics(1)

Symbol

Parameter

Conditions

Min

Typ

Max Unit

fLSI

LSI frequency

VDD = 3.0 V, TA = 30 °C

31.04

32.96

kHz

VDD = VDD(min) to 3.6 V, TA = -40 to

85 °C

29.5

tSU(LSI)(2)

LSI oscillator start-up time

130

μs

tSTAB(LSI)(2) LSI oscillator stabilization time 5% of final frequency

125

180

μs

IDD(LSI)(2)

LSI oscillator power

consumption

110

180

1. Based on characterization results, not tested in production.

2. Guaranteed by design.

Table 39. PLL characteristics(1)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fPLL_IN

PLL input clock frequency(2)

-2.66

MHz

DPLL_IN

PLL input clock duty cycle

fPLL_P_OUT PLL multiplier output clock P

Voltage scaling Range 1

3.09

122

MHz

Voltage scaling Range 2

3.09

fPLL_R_OUT PLL multiplier output clock R

Voltage scaling Range 1

MHz

Voltage scaling Range 2

fVCO_OUT PLL VCO output

Voltage scaling Range 1

344

MHz

Voltage scaling Range 2

128

tLOCK

PLL lock time

μs

Jitter

RMS cycle-to-cycle jitter

System clock 56 MHz

-50

±ps

RMS period jitter

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