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PFD1K データシート(PDF) 12 Page - Microsemi Corporation |
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PFD1K データシート(HTML) 12 Page - Microsemi Corporation |
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12 / 19 page ![]() 12 of 19 SMD-00191 Rev D Subject to Change Without Notice PFD1K ESD Sensitivity: Although SiGe IC’s have robust ESD sensitivities, preventive ESD measures should be taken while storing, handling, and assembling. Inputs are more ESD susceptible as they could expose the base of a BJT or the gate of a MOSFET. For this reason, all the low frequency inputs are protected with ESD diodes. These inputs have been tested to withstand voltage spikes up to 400 V. For performance reasons the RF inputs are not protected with ESD diodes and the ESD sensitivity is higher. Parameter Value Unit Supply Voltage (VCC-VEE) 4 V RF Input Power (INP, INN) 10 dBm Operating Temperature -40 to 85 ºC Storage Temperature -85 to 125 ºC Junction Temperature 125 ºC Table 4: Absolute Maximum Ratings |
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