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ADRF5473BCZ データシート(PDF) 16 Page - Analog Devices

部品番号 ADRF5473BCZ
部品情報  Die on Carrier, Silicon Digital Attenuator, 0.5 dB LSB, 6-Bit, 100 MHz to 40 GHz
PDF  17 Pages
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メーカー  AD [Analog Devices]
ホームページ  http://www.analog.com
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ADRF5473BCZ データシート(HTML) 16 Page - Analog Devices

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Data Sheet
ADRF5473
APPLICATIONS INFORMATION
analog.com
Rev. 0 | 16 of 17
DIE ASSEMBLY
An assembly diagram of the ADRF5473 is shown in Figure 28.
Figure 28. Die Assembly Diagram
The ADRF5473 is designed to have the optimum RF input and
output impedance match with 3 mil × 0.5 mil gold ribbon wire and
3 mil loop height typical. The bonding diagrams are shown in
Figure 29 and Figure 30. Alternatively, using multiple wire bonds
with equivalent inductance yields similar performance. For RF rout-
ing from the device, coplanar wave guide or microstrip transmission
lines can be used. No impedance matching is required on the
transmission line pad because the device is designed to match
internally to the recommended ribbon bond. A spacing of 3 mils
from the RF transmission line to the device edge is recommended
for optimum performance.
DC pads can be connected using standard 1 mil diameter wire by
keeping the wire lengths as short as possible to minimize the para-
sitic inductance. The dc pads are large enough to accommodate
ribbon bonds, if preferred.
All bonds must be thermosonically bonded at a nominal stage
temperature of 150°C, and a minimum amount of ultrasonic energy
must be applied to achieve reliable bonds.
The device is metalized on the backside, and the ground connec-
tion can be done by attaching the device directly to the RF ground
plane using a conductive epoxy. In this case, connecting the ground
pads is optional but still recommended to ensure a solid ground
connection.
Figure 29. Bonding Diagram Top View
Figure 30. Bonding Diagram Side View
HANDLING, MOUNTING, AND EPOXY DIE
ATTACH
Keep devices in ESD protective sealed bags for shipment, and
store all bare die in a dry nitrogen environment.
For manual picking, it is a common practice to use a pair of
tweezers for GaAs devices. However, for die on carrier devices, the
use of a vacuum tool is recommended to avoid any damage on the
device substrate. Handle these devices in a clean environment.
To attach the die with epoxy, apply an amount of epoxy to the
mounting surface so that a thin epoxy fillet is observed around
the perimeter of the chip after it is placed into position. Set epoxy
cure temperatures per the recommendations of the manufacturer
and the maximum ratings of the device to minimize accumulated
mechanical stress after assembly.
Because both dies are attached with solder joints, users must follow
best practices for the thermomechanical design of their module
assemblies. The temperature expansion coefficient of the substrate
material must match the thermal expansion coefficient of the GaAs
and silicon (Si) die. Do not allow warpage or other mechanical
deformation on the substrate. Set the die attach process and the
epoxy cure temperatures to lower the accumulated stress after
assembly.



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