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データシートサーチシステム |
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データシートサーチシステム |
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2SC3866A データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC3866A データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SC3866A DESCRIPTION · High Breakdown Voltage : V(BR)CBO= 1000V(Min) · High Switching Speed · High Reliability · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Switching regulators · Ultrasonic generators · High frequency inverters · General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 3 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.0 ℃ /W |
同様の部品番号 - 2SC3866A |
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同様の説明 - 2SC3866A |
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