

2020 Microchip Technology Inc.

DS20005942A-page 1

TN2106

Features

• Free from Secondary Breakdown

• Low Power Drive Requirement

• Ease of Paralleling

• Excellent Thermal Stability

• Integral Source-Drain Diode

• High Input Impedance and High Gain

Applications

• Logic-Level Interfaces (Ideal for TTL and CMOS)

• Solid-State Relays

• Battery-Operated Systems

• Photovoltaic Drives

• Analog Switches

• General Purpose Line Drivers

• Telecommunication Switches

General Description

The TN2106 low-threshold Enhancement-mode

(normally-off) transistor uses a vertical DMOS structure

and a well-proven silicon-gate manufacturing process.

This combination produces a device with the power

handling capabilities of bipolar transistors and the high

input impedance and positive temperature coefficient

inherent in MOS devices. Characteristic of all MOS

structures, this device is free from thermal runaway and

thermally induced secondary breakdown.

Microchip’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications

where very low threshold voltage, high breakdown

voltage, high input impedance, low input capacitance,

and fast switching speeds are desired.

Package Types

See Table 3-1 and Table 3-2 for pin information.

3-lead TO-92

(Top view)

GATE

SOURCE

DRAIN

3-lead SOT-23

(Top view)

DRAIN

SOURCE

GATE

N-Channel Enhancement-Mode Vertical DMOS FET