MIC4826YMM datasheet(3/22 Pages) MICROCHIP

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DS20006134B-page 3

MIC4826

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings †

Supply Voltage (VDD) ................................................................................................................................... –0.5V to +6V

Output Voltage (VCS) ............................................................................................................................... –0.5V to +100V

Frequency Control Voltage (VRSW, VREL)....................................................................................... –0.5V to (VDD +0.3V)

Power Dissipation @ TA = 85°C ..........................................................................................................................200 mV

Storage Temperature (TS)......................................................................................................................–65°C to +150°C

ESD Rating .......................................................................................................................................................... (Note 1)

Operating Ratings ‡

Supply Voltage (VDD) ................................................................................................................................ +1.8V to +5.5V

Lamp Drive Frequency (fEL).................................................................................................................. 60 Hz to 1000 Hz

Switching Transistor Frequency (fSW)....................................................................................................8 kHz to 200 kHz

Ambient Temperature............................................................................................................................... –40°C to +85°C

Package Thermal Resistance (R(JA), 8-Pin MSOP)..........................................................................................206°C/W

† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of the device at those or any other conditions above those indicated

in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended

periods may affect device reliability. Specifications are for packaged product only.

‡ Notice: The device is not guaranteed to function outside its operating ratings.

Note 1: Devices are ESD sensitive. Handling precautions are recommended.

ELECTRICAL CHARACTERISTICS

Electrical Characteristics: VIN = VDD = 3.0V, RSW = 560 kΩ, REL = 1.0 MΩ.TA = 25°C unless otherwise noted. Bold

values indicate –40°C ≤ TA ≤ +85°C.

Parameter

Symbol

Min.

Typ. Max. Units Conditions

On-Resistance of Switching

Transistor

RDS(ON)

—

3.8

7.0

ISW = 100 mA, VCS = 75V

Output Voltage Regulation

VCS

VDD = 1.8V to 5.5V

—

Output Peak-to-Peak Voltage

VA-VB

150

160

170

VDD = 1.8V to 5.5V

146

—

174

—

Input Low Voltage (Turn Off)

VEN-L

—

0.5

VDD = 1.8V to 5.5V

Input High Voltage (Turn On)

VEN-H

VDD–0.5

—

VDD = 1.8V to 5.5V

Shutdown Current (Note 2)

ISD

—

0.01

0.1

µA

RSW = LOW; REL = LOW

VDD = 5.5V

—

0.5

Input Supply Current

IVDD

—

µA

RSW = HIGH; REL = HIGH

VCS = 75V; VA, VB OPEN

Boosted Supply Current

ICS

—

200

400

µA

RSW = HIGH; REL = HIGH

VCS = 75V; VA, VB OPEN

Input Current Including Inductor

Current

IIN

—

mA VIN = VDD = 1.8V. See (Figure 1-1)

VA - VB Output Drive Frequency

fEL

285

360

435

—

Switching Transistor Frequency

fSW

kHz —

Switching Transistor Duty Cycle

—

Note 1: Specification for packaged product only.

2: Shutdown current is defined as the sum of current going into pin 1, 5, and 6 when the device is disabled.

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