STFI15NM65N datasheet(4/15 Pages) STMICROELECTRONICS

4 / 15 page

Electrical characteristics

STF15NM65N, STFI15NM65N

4/15

DocID13853 Rev 4

Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 5. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage VGS = 0, ID = 1 mA

650

lDSS

Zero gate voltage drain current

VDD = 650 V, VGS=0

µA

VDD = 650 V, VGS = 0

TC = 125 °C

(1)

Defined by design, not subject to production test

100

µA

lGSS

Gate body leakage

VGS= ±25 V, VDS = 0 V

±100

VGS(th)

Gate threshold voltage

ID= 250 µA, VGS =VDS

RDS(on)

Static drain-source on-

resistance

ID= 6 A, VGS= 10V

0.35

0.38

Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min. Typ.

Ma.

Unit

Ciss

Input capacitance

VDS= 50 V, f = 1MHz,

VGS= 0 V

983

Coss

Output capacitance

Crss

Reverse capacitance

4.5

Cosseq

(1)

Cross eq: defined as a constant equivalent capacitance giving the same charging time as COSS when VDS

increases from 0 to 80 % VDSS.

Equivalent output.

capacitance

VDS = 0 V to 520 V, VGS = 0 V

146

Intrinsic gate resistance

f = 1MHz ID = 0 A

4.6

Ω

Total gate charge

VDD= 520 V, ID=12 A,

VGS= 10 V (see Figure 13:

Gate charge test circuit)

33.3

Qgs

Gate source charge

5.7

Qgd

Gate-drain charge

Table 7. Switching times

Symbol

Parameter

Test conditions

Min. Typ. Max.

Unit

td(on)

Turn-on delay time

VDD= 325 V, ID = 6 A

Rg= 4.7 Ω, VGS = 10 V(see

Figure 12: Switching times

test circuit for resistive

load and Figure 17:

Switching time waveform)

55.5

Rise time

8.5

td(off)

Turn-off-delay time

Fall time

11.4

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