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2SC5886A データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC5886A データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SC5886A DESCRIPTION · High switching speed time · Low collector-to-emitter saturation voltage · Fast switching speed · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · High-Speed Switching Applications · DC/DC Converter Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-peak 10 A IB Base Current 0.5 A PC Collector Power Dissipation Ta=25℃ 1.0 W Collector Power Dissipation TC=25℃ 20 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
同様の部品番号 - 2SC5886A |
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同様の説明 - 2SC5886A |
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