BLP27M810

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© Ampleon Netherlands B.V. 2016. All rights reserved.

Product data sheet

Rev. 1 — 11 February 2016

2 of 11

BLP27M810

Power LDMOS transistor

2. Pinning information

[1]

To be used in single ended applications only.

[2]

Connected to flange.

3. Ordering information

4. Limiting values

5. Thermal characteristics

Table 2.

Pinning

Pin

Description

Simplified outline

Graphic symbol [1]

1, 2, 7, 8, 9, 10, 15, 16

n.c.

3, 4, 5, 6

gate

11, 12, 13, 14

drain

exposed die-pad

source

[2]

16

9

Transparent top view

18

5, 6

3, 4

exposed

die-pad

11, 12

13, 14

aaa-017947

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BLP27M810

HVSON16 plastic thermal enhanced very thin small outline

package; no leads;16 terminals; body 4

 6  0.85 mm

SOT1371-1

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

65

V

gate-source voltage

0.5

+13

V

storage temperature

65

+150

C

junction temperature

-

225

C

Table 5.

Thermal characteristics

Symbol Parameter

Conditions

Typ

Unit

3.2

K/W