ART35FE

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© Ampleon Netherlands B.V. 2020. All rights reserved.

Product data sheet

Rev. 1 — 7 December 2020

5 of 19

ART35FE

Power LDMOS transistor

7.

Application information

7.1 Application circuit f = 10 MHz to 54 MHz

Printed-Circuit Board (PCB): Rogers RO4350;



copper = 35

m.

See Table 9 for a list of components.

Fig 3.

Component layout

Table 9.

List of components

For test circuit see Figure 3.

Component

Description

Value

Remarks

C1

multilayer ceramic chip capacitor

2

 910 pF

ATC 800B

C2

multilayer ceramic chip capacitor

2

 620 pF

ATC 800B

C3

electrolytic capacitor

47

F

C4, C9

multilayer ceramic chip capacitor

4.7

F, 100 V

C5, C6, C8, C11

multilayer ceramic chip capacitor

100 nF, 100 V

C7

multilayer ceramic chip capacitor

30 pF

ATC 800A

C10

electrolytic capacitor

220

F, 100 V

C12

multilayer ceramic chip capacitor

24 pF

ATC 800B

R1, R2

chip resistor

2.4



SMD 1206

R3

chip resistor

43



SMD 1206

R4

chip resistor

5.1 k



SMD 1206

L1

chip inductor

270 nH

1206CS

L2

chip inductor

68 nH

1206CS

L3

toroid inductor

18 turns, D = 5 mm

0.8 mm copper wire,

Ferrite: FT-50-43

L4

air core inductor

68 nH

1812SMS

L5

air core inductor

22 nH

1812SMS

50 mm

60 mm

C6

L2

C3

C4

C5 R4

C7

L3

C8

C9

C10

C11

L4

C12

C1 C2

R1

R2

L1 R3

L5

50 mm

amp01532