BLC2425M8LS300P datasheet(3/12 Pages) AMPLEON

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BLC2425M8LS300P

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Poduct data sheet

Rev. 3 — 17 June 2016

3 of 12

BLC2425M8LS300P

Power LDMOS transistor

6. Characteristics

7. Test information

7.1 Ruggedness in class-AB operation

The BLC2425M8LS300P is capable of withstanding a load mismatch corresponding to

VSWR = 10 : 1 through all phases under the following conditions: VDS =32V;

IDq =20mA; PL = 300 W (CW); f = 2450 MHz.

7.2 Impedance information

[1]

ZS and ZL defined in Figure 1.

Table 6.

DC characteristics

Tj = 25 C, per section; unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

V(BR)DSS drain-source breakdown

voltage

VGS =0V; ID =2.2 mA

VGS(th)

gate-source threshold voltage

VDS =10 V; ID = 220 mA 1.5

1.9

2.3

IDSS

drain leakage current

VGS =0 V; VDS =28 V

2.8

A

IDSX

drain cut-off current

VGS =VGS(th) +3.75 V;

VDS =10 V

-39

IGSS

gate leakage current

VGS =11 V; VDS = 0 V

280

gfs

forward transconductance

VDS =10 V; ID =11A

RDS(on)

drain-source on-state

resistance

VGS =VGS(th) + 3.75 V;

ID =7.7 A

-0.08



Table 7.

RF characteristics

Test signal: CW at 2450 MHz; RF performance at VDS = 32 V; IDq = 20 mA; Tcase = 25 C; unless

otherwise specified; in a class-AB production test circuit.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

power gain

PL = 300 W

16.3

17.5 -

RLin

input return loss

PL = 300 W

14

7dB

D

drain efficiency

PL = 300 W

54.5 -

Table 8.

Typical impedance

Measured load-pull data half device. Typical values unless otherwise specified. IDq =20mA;

VDS =32V.

ZS [1]

ZL [1]

(MHz)

(

)

(

)

2400

1.2

 5.9j

3.7

 2.8j

2450

1.3

 5.0j

3.2

 2.5j

2500

3.3

 7.0j

3.1

 2.3j

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