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BLF0910H9LS600 データシート(PDF) 6 Page - Ampleon Netherlands B.V. |
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BLF0910H9LS600 データシート(HTML) 6 Page - Ampleon Netherlands B.V. |
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6 / 11 page ![]() BLF0910H9LS600 All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2018. All rights reserved. Product data sheet Rev. 2 — 22 June 2018 6 of 11 BLF0910H9LS600 Power LDMOS transistor VDS = 50 V; IDq = 90 mA. (1) f = 902 MHz (2) f = 915 MHz (3) f = 928 MHz VDS = 50 V; IDq = 90 mA; PL = 600 W. (1) Gp (2) D Fig 5. Output power as a function of input power; typical values Fig 6. Power gain and drain efficiency as a function of frequency; typical values amp00466 25 27.5 30 32.5 35 37.5 40 42.5 45 45 47.5 50 52.5 55 57.5 60 Pi (dBm) PL PL (dBm) (dBm) (dBm) (3) (3) (3) (2) (2) (2) (1) (1) (1) amp00467 900 905 910 915 920 925 930 14 0 16 20 18 40 20 60 22 80 f (MHz) Gp Gp (dB) (dB) (dB) ηD ηD (%) (%) (%) (1) (1) (1) (2) (2) (2) |
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