SS22, SS23, SS24, SS25, SS26

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Vishay General Semiconductor

Revision: 23-Apr-2020

1

Document Number: 88748

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Surface-Mount Schottky Barrier Rectifier

LINKS TO ADDITIONAL RESOURCES

FEATURES

• Low profile package

• Ideal for automated placement

• Guardring for overvoltage protection

• Low power losses, high efficiency

• Low forward voltage drop

• High surge capability

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHE3 or P/NHM3

• Material categorization: for definitions of compliance

TYPICAL APPLICATIONS

For

use

in

low

voltage

high

frequency

inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

MECHANICAL DATA

Case: SMB (DO-214AA)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/N-M3 - halogen-free, RoHS-compliant, commercial

grade

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

Base P/NHM3_X - halogen-free, RoHS-compliant, and

AEC-Q101 qualified

(“_X” denotes revision code e.g. A, B, .....)

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3, M3, HE3, and HM3 suffix meets JESD 201 class 2

whisker test

Polarity: color band denotes cathode end

PRIMARY CHARACTERISTICS

2.0 A

20 V, 30 V, 40 V, 50 V, 60 V

75 A

0.50 V, 0.70 V

150 °C

Package

SMB (DO-214AA)

Circuit configuration

Single

SMB (DO-214AA)

Cathode

Anode

333

DDD3 D

3D Models

Available

Available

PARAMETER

SYMBOL

SS22

SS23

SS24

SS25

SS26

UNIT

Device marking code

S2

S3

S4

S5

S6

Maximum repetitive peak reverse voltage

20

30

40

50

60

V

Maximum RMS voltage

14

21

28

35

42

V

Maximum DC blocking voltage

20

30

40

50

60

V

2.0

A

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

75

A

20

mJ

Electrostatic discharge capacitor voltage

Human body model: C = 100 pF, R = 1.5 k

Ω

8.0

kV

dV/dt

10 000

V/μs

Operating junction temperature range

-65 to +150

°C

Storage temperature range

-65 to +150

°C