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QPD1008LEVB2 データシート(PDF) 1 Page - Qorvo, Inc |
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QPD1008LEVB2 データシート(HTML) 1 Page - Qorvo, Inc |
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1 / 20 page ![]() QPD1008L 125W, 50V, DC – 3.2 GHz, GaN RF Transistor Data Sheet Rev. I, October 2021 | Subject to change without notice 1 of 20 www.qorvo.com Product Features • Frequency: DC to 3.2 GHz • Output Power (P3dB)1: 162 W • Linear Gain1: 17.5 dB • Typical DEFF3dB1: 74% • Operating Voltage: 50 V • Low thermal resistance package • CW and Pulse capable Note: 1 @ 2 GHz General Description The QPD1008L is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz with a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited for military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed, CW, and linear operation. Lead-free and ROHS compliant Evaluation boards are available upon request. Functional Block Diagram Applications • Military radar • Civilian radar • Land mobile and military radio communications • Test instrumenation • Wideband or narrowband amplifiers • Jammers • Avionics Part No. Description QPD1008L DC – 3.2 GHz RF Transistor QPD1008LPCB4B01 0.96 – 1.215 GHz EVB QPD1008LEVB2 1.1 – 1.5 GHz EVB 1 2 |
同様の部品番号 - QPD1008LEVB2 |
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同様の説明 - QPD1008LEVB2 |
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