QPD1015L datasheet(2/27 Pages) QORVO

2 / 27 page

QPD1015L

65W, 50V, DC – 3.7 GHz, GaN RF Transistor

Rev. C

- 2 of 27 -

Disclaimer: Subject to change without notice

www.qorvo.com

Absolute Maximum Ratings1

Parameter

Rating

Units

Breakdown Voltage, BVD

+145

Gate Voltage Range, VG

-7 to +2

Drain Current, IDMAX

10.2

Gate Current Range, IG

See pg. 7.

Power Dissipation, CW, PDISS, Base Temperature = 85 °C

RF Input Power, CW, 50 , T = 25 °C

+37

dBm

Channel Temperature, TCH

275

°C

Mounting Temperature (30 Seconds)

320

°C

Storage Temperature

−40 to +150

°C

Notes:

. Operation of this device outside the parameter ranges given above may cause permanent damage.

Recommended Operating Conditions1

Parameter

Min

Typ

Max

Units

Operating Temperature Range

−40

+25

+85

°C

Drain Voltage Range, VD

+12

+50

+55

Drain Current, ID3

–

2.5

–

Drain Bias Current, IDQ

–

Gate Voltage, VG4

–

−2.8

–

Channel Temperature, TCH

–

250

°C

Power Dissipation, CW, PD2

–

Power Dissipation, Pulsed, PD2, 3

–

Notes:

1. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed

over all recommended operating conditions.

2. Package base at 85 °C

3. Drain current at P3dB, Pulse Width = 128 uS, Duty Cycle = 10%

4. To be adjusted for desired IDQ

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