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UGE8HT データシート(PDF) 2 Page - Vishay Siliconix |
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UGE8HT データシート(HTML) 2 Page - Vishay Siliconix |
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2 / 4 page ![]() UGE8HT, UGE8JT www.vishay.com Vishay General Semiconductor Revision: 19-Apr-16 2 Document Number: 87926 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle RATINGS AND CHARACTERISTCS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Max. Forward Current Derating Curve Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL UGE8HT UGE8JT UNIT Max. instantaneous forward voltage (1) IF = 8 A TJ = 25 °C VF 1.75 V IF = 8 A TJ = 125 °C 1.50 Max. DC reverse current at VRWM TJ = 25 °C IR 30 μA TJ = 100 °C 800 μA TJ = 125 °C 4.0 mA Max. reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 25 ns IF = 1.0 A, dI/dt = 50 A/μs, VR = 30 V, Irr = 0.1 IRM trr 50 ns Typical softness factor (tb/ta) IF = 8.0 A, dI/dt = 240 A/μs, VR = 400 V, Irr = 0.1 IRM S 1.0 - Max. reverse recovery current IF = 8.0 A, dI/dt = 64 A/μs, VR = 400 V, TC = 125 °C IRM 5.5 A IF = 8.0 A, dI/dt = 240 A/μs, VR = 400 V, TC = 125 °C IRM 10 A Peak forward recovery time IF = 8.0 A, dI/dt = 64 A/μs, VF = 1.1 x VF max. tfr 500 ns THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL UGE8HT UGE8JT UNIT Typical thermal resistance from junction to case R JC 2.2 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AC UGE8HT-E3/45 1.80 45 50/tube Tube 0 12 10 6 8 2 4 25 50 75 100 125 150 175 Case Temperature (°C) Resistive or Inductive Load UG8F UG8, UGB8 100 10 1000 1 100 10 T J = TJ max. 8.3 ms Single Half Sine-Wave Number of Cycles at 60 Hz |
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