ACE12410BMN+H datasheet(1/7 Pages) ACE

部品番号	ACE12410BMN+H

部品情報	N-Channel Enhancement Mode Field Effect Transistor

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メーカー	ACE [ACE Technology Co., LTD.]

ホームページ	http://www.ace-ele.com

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ACE12410B

N-Channel Enhancement Mode Field Effect Transistor

VER 1.2

1

Features



VDS (V) = 20V



ID = 11.5A



RDS(ON) = 10.5mΩ@VGS=4.5V



RDS(ON) = 14mΩ@VGS=2.5V

General Description



load switch



battery protection applications



ESD Protection

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

20

V

Gate-Source Voltage

VGSS

±12

V

Drain Current (Continuous)

*AC

TA=25

OC

ID

11.5

A

TA=70

OC

9.2

Drain Current (Pulse)

*B

IDM

32

Power Dissipation

TA=25

OC

PD

2.8

W

Operating and Storage Temperature Range

TJ,TSTG

-55 to 150

OC

A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

environment with TA=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C:

The current rating is based on the t≤ 10s junction to ambient thermal resistance rating, package limited 8A.

Thermal Resistance Ratings

Parameter

Symbol

Maximum

Unit

Maximum Junction-to-Ambient

t ≤10s

R

thJA

45

°C/W

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