QPD1028LEVB datasheet(1/16 Pages) QORVO

部品番号	QPD1028LEVB

部品情報	750 W, 65 V, 1.2 ??1.4 GHz, GaN RF Input-Matched Transistor

PDF	16 Pages

Scroll/Zoom	100%

メーカー	QORVO [Qorvo, Inc]

ホームページ	https://www.qorvo.com/

Logo

1 / 16 page

QPD1028L

750 W, 65 V, 1.2 – 1.4 GHz, GaN RF Input-Matched Transistor

Data Sheet Rev. C, Oct 2021 | Subject to change without notice

1 of 16

www.qorvo.com

®

Ni-780 Package

Key Features

• Frequency Range: 1.2 to 1.4 GHz

• Linear Gain1: 19.8 dB

• Output Power (P3dB)1: 838.5 W

• Drain Efficiency (P3dB)1: 67.3%

• Operating Voltage: 65 V

• CW and Pulse capable

Note 1: EVB Performance @ 1.3 GHz

Product Overview

The Qorvo QPD1028L is a 750 W (P3dB) discrete GaN on

SiC HEMT which operates from 1.2 to 1.4 GHz. Input pre-

match within the package results in ease of external board

match and saves board space. The device is in an industry

standard air cavity package and is ideally suited for radar.

The device can support both CW and pulsed operations.

Evaluation boards are available upon request.

Functional Block Diagram

Ordering Information

Applications

• L-Band Radar

Part No.

Description

QPD1028L

1.2

– 1.4 GHz Transistor (18 pcs in tray)

QPD1028LEVB

1.2

– 1.4 GHz Evaluation Board

同様の部品番号 - QPD1028LEVB

メーカー	部品番号	データシート	部品情報
Qorvo, Inc	QPD1028	1Mb / 16P	750 W, 65 V, 1.2 – 1.4 GHz, GaN RF Input-Matched Transistor November 2021
Qorvo, Inc	QPD1028EVB	1Mb / 16P	750 W, 65 V, 1.2 – 1.4 GHz, GaN RF Input-Matched Transistor November 2021

メーカー	部品番号	データシート	部品情報
TriQuint Semiconductor	QPD1025	1Mb / 18P	1500 W, 65 V, 1.0 ??1.1 GHz, GaN RF Input-Matched Transistor
TriQuint Semiconductor	QPD1025L	1Mb / 18P	1500 W, 65 V, 1.0 ??1.1 GHz, GaN RF Input-Matched Transistor
Qorvo, Inc	QPD1025L	3Mb / 27P	1800 W, 65 V, 0.96 ??1.215GHz, GaN RF Input-Matched Transistor
	TGF2965-SM	1Mb / 21P	5 W, 32 V, 0.03?? GHz, GaN RF Input-Matched Transistor
	TGF3015-SM	1Mb / 20P	10 W, 32 V, 0.03 ??3 GHz, GaN RF Input-Matched Transistor
	QPD1029L	1Mb / 16P	1500 W, 65 V, 1.2??1.4GHz, GaN RF Input-Matched Transistor Sep 2019
	QPD1025L	3Mb / 26P	1800 W, 65 V, 0.96 ??1.215GHz, GaN RF Input-Matched Transistor March 2022
	QPD1025	3Mb / 26P	1800 W, 65 V, 0.96 ??1.215GHz, GaN RF Input-Matched Transistor April 2022
	QPD1026L	1Mb / 19P	1300 W, 65 V, 420 ??450 MHz, GaN RF Input-Matched Transistor December 2018
	QPD1028	1Mb / 16P	750 W, 65 V, 1.2 – 1.4 GHz, GaN RF Input-Matched Transistor November 2021