AnaSem

4

Rev. E13-01

VDD Series

Low voltage, Low power, ±1% High detect accuracy with delay circuit CMOS Voltage Detector

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ELECTRICAL CHARACTERISTICS

(Ta=25°C unless otherwise specified)

Items

Symbol

Conditions

Min.

Typ.

Max.

Unit

Test

circuit

Operating voltage

0.7

-

6.0

V

1

Detection voltage

Ta = –40°C ~ +85°C

×0.99

×1.01

V

1

Hysteresis range

×0.02

×0.05

×0.08

V

1

Output current

N-ch

0.1

0.4

-

mA

3

1.0

2.3

-

mA

3.0

8.2

-

mA

5.0

11.1

-

mA

6.0

12.8

-

mA

7.0

13.8

-

mA

CMOS P-ch

-

-9.5

-1.5

mA

4

CMOS N-ch

1.5

9.5

-

mA

3

Current consumption

-

0.6

2.1

µ

A

2

-

0.7

2.5

µ

A

-

0.8

2.8

µ

A

-

0.9

3.0

µ

A

-

1.0

3.4

µ

A

Leak current

-

10

100

nA

3

Detection voltage

temperature coefficient

Ta = –40°C ~ +85°C

-

±20

-

ppm/°C

1

Delay time

10

-

50

ms

5

50

-

200

ms

80

-

400

ms