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4606 データシート(PDF) 5 Page - Shenzhen Tuofeng Semiconductor Technology Co

部品番号 4606
部品情報  N and P-Channel Enhancement Mode Power MOSFET
PDF  8 Pages
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メーカー  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
ホームページ  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

4606 データシート(HTML) 5 Page - Shenzhen Tuofeng Semiconductor Technology Co

  4606 Datasheet HTML 1Page - Shenzhen Tuofeng Semiconductor Technology Co 4606 Datasheet HTML 2Page - Shenzhen Tuofeng Semiconductor Technology Co 4606 Datasheet HTML 3Page - Shenzhen Tuofeng Semiconductor Technology Co 4606 Datasheet HTML 4Page - Shenzhen Tuofeng Semiconductor Technology Co 4606 Datasheet HTML 5Page - Shenzhen Tuofeng Semiconductor Technology Co 4606 Datasheet HTML 6Page - Shenzhen Tuofeng Semiconductor Technology Co 4606 Datasheet HTML 7Page - Shenzhen Tuofeng Semiconductor Technology Co 4606 Datasheet HTML 8Page - Shenzhen Tuofeng Semiconductor Technology Co  
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P-CH Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-30
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=-24V,VGS=0V
-
-
-50
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
On Characteristics
(Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
-1.0
-1.3
-2.0
V
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-6.0A
-
42
45
mΩ
Forward Transconductance
gFS
VDS=-5V,ID=-5.0A
10
-
-
S
Dynamic Characteristics
(Note4)
Input Capacitance
Clss
-
930
-
PF
Output Capacitance
Coss
-
121
-
PF
Reverse Transfer Capacitance
Crss
VDS=-15V,VGS=0V,
F=1.0MHz
-
102
-
PF
Switching Characteristics
(Note 4)
Turn-on Delay Time
td(on)
-
9.5
-
nS
Turn-on Rise Time
tr
-
5.4
-
nS
Turn-Off Delay Time
td(off)
-
42.5
-
nS
Turn-Off Fall Time
tf
VDD=-15V, RL=5.0Ω
VGS=-10V,RGEN=6Ω
-
13.6
-
nS
Total Gate Charge
Qg
-
20
-
nC
Gate-Source Charge
Qgs
-
4.1
-
nC
Gate-Drain Charge
Qgd
VDS=-15V,ID=-3.0A
VGS=-10V
-
2.6
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
VSD
VGS=0V,IS=-2.0A
-
0.75
-1.0
V
-
VGS=-4.5V, ID=-5.0A
-
55
60
mΩ
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 .
%
4.
Guaranteed by design, not subject to production
ID=-3.0A
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOP-8 Plastic-Encapsulate MOSFETS
4606



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