4622 datasheet(2/8 Pages) TUOFENG

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Symbol

Min

Typ

Max

Units

BVDSS

IGSS

100

VGS(th)

0.6

1.25

ID(ON)

Ω

gFS

VSD

0.7

Ciss

900

1100

Coss

162

Crss

105

0.9

1.35

Ω

Qg(10V)

Qg(4.5V)

7.2

Qgs

1.8

Qgd

2.8

tD(on)

4.5

9.2

tD(off)

18.7

3.3

trr

Qrr

9.5

N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Parameter

Conditions

STATIC PARAMETERS

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

IDSS

Zero Gate Voltage Drain Current

VDS=16V, VGS=0V

Gate-Body leakage current

VDS=0V, VGS=±16V

Gate Threshold Voltage

VDS=VGS ID=250µA

On state drain current

VGS=4.5V, VDS=5V

RDS(ON)

Static Drain-Source On-Resistance

VGS=2.5V, ID=4.5A

VGS=4.5V, ID=6.4A

Forward Transconductance

VDS=5V, ID=6.4A

Diode Forward Voltage

IS=1A

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

Input Capacitance

VGS=0V, VDS=10V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS

Total Gate Charge

VGS=10V, VDS=10V, ID=6.5A

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

VGS=10V, VDS=10V, RL=1.4Ω,

RGEN=3Ω

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

IF=6.4A, dI/dt=100A/µs

Body Diode Reverse Recovery Charge IF=6.4A, dI/dt=100A/µs

A: The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The value

in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. RθJL and RθJC are equivalent terms referring to

thermal resistance from junction to drain lead.

D. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The SOA

curve provides a single pulse rating.

F. The current rating is based on the t ≤ 10s thermal resistance rating.

Rev5: Nov 2010

Ω

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOP-8 Plastic-Encapsulate MOSFETS

4622

Page

v1.0

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