TF8821 datasheet(1/5 Pages) TUOFENG

部品番号	TF8821

部品情報	N -CHANNEL ENHANCEMENT MODE POWER MOSFET

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メーカー	TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]

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TF8821

Shenzhen Tuofeng Semiconductor Technology Co., Ltd

N -CHANNEL ENHANCEMENT MODE POWER MOSFET

1

www.sztuofeng.com

2021 V1.2

●Ordering Information:

●Absolute Maximum Ratings

（T

C =25

℃

）

● General Description

The TF8821 combines advanced trench

Mosfet technology with a low resistance package

to provide extremely low R

DS(ON)

.This device is ideal

for load switch and battery protection applications.

● Features

Advance high cell density Trench technology

Low RDS(ON) to minimize conductive loss

Low Gate Charge for fast switching

Low Thermal resistance

●Application

Battery Protection

Load Switch

Power Management

● Product Summary

Part NO.

TF8821

Marking 1

MOQ

5000

8821:Part No.

Marking 2

Y:year code; X:Week; AA:device code;

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

19

V

Gate-Source Voltage

VGS

±12

V

Continuous Drain Current

ID@TC=25

℃

15

A

ID@TC=75

℃

11

A

ID @TC=100

℃

9

A

Pulsed Drain Current ①

IDM

45

A

Total Power Dissipation

PD@TC=25

℃

12

W

Total Power Dissipation

PD@TA=25

℃

0.8

W

Operating Junction Temperature

T J

-55 to 150

℃

Storage Temperature

TSTG

-55 to 150

℃

Note:

① Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% ;

V(BR)DSS

RDS(on) TYP

ID

19V

5.0mΩ @ 4.5V

15A

@ 2.5V

Max

6.1mΩ

DFN3x3-8L

AYXA

８８２１

TF

TF:tuofeng;

NOV.

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