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8804 データシート(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

部品番号 8804
部品情報  Dual N-Channel MOSFET
PDF  5 Pages
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メーカー  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
ホームページ  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

8804 データシート(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

  8804 Datasheet HTML 1Page - Shenzhen Tuofeng Semiconductor Technology Co 8804 Datasheet HTML 2Page - Shenzhen Tuofeng Semiconductor Technology Co 8804 Datasheet HTML 3Page - Shenzhen Tuofeng Semiconductor Technology Co 8804 Datasheet HTML 4Page - Shenzhen Tuofeng Semiconductor Technology Co 8804 Datasheet HTML 5Page - Shenzhen Tuofeng Semiconductor Technology Co  
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www.sztuofeng.com
Feb,2018 V1.0
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
2
TSSOP-8 Plastic-Encapsulate MOSFETS
8804
Symbol
Min
Typ
Max
Units
BVDSS
20
V
10
IGSS
10
µA
BVGSO
±12
V
VGS(th)
0.5
0.75
1
V
ID(ON)
30
A
10
13
11.5
14
15.4
19
22.2
27
gFS
36
S
VSD
0.73
1
V
IS
2.4
A
Ciss
1810
pF
Coss
232
pF
Crss
200
pF
Rg
1.6
Ω
Qg
17.9
nC
Qgs
1.5
nC
Qgd
4.7
nC
tD(on)
2.5
ns
tr
7.2
ns
tD(off)
49
ns
tf
10.8
ns
trr
20.2
ns
Qrr
8nC
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=8A
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IF=8A, dI/dt=100A/µs
Reverse Transfer Capacitance
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=10V, RL=1.2Ω,
RGEN=3Ω
Turn-On DelayTime
IF=8A, dI/dt=100A/µs
SWITCHING PARAMETERS
µA
VGS=4.5V, VDS=5V
VGS=4.5V, ID=5A
Gate-Body leakage current
Gate-Source Breakdown Voltage
VDS=0V, IG=±250uA
Gate Threshold Voltage
m
Ω
VDS=VGS ID=250µA
VDS=16V, VGS=0V
VDS=0V, VGS=±10V
VDS=5V, ID=8A
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
IDSS
Zero Gate Voltage Drain Current
IS=1A,VGS=0V
DYNAMIC PARAMETERS
VGS=0V, VDS=10V, f=1MHz
VGS=2.5V, ID=4A
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
VGS=1.8V, ID=3A
Forward Transconductance
Diode Forward Voltage
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
VGS=4.5V, VDS=10V, ID=8A
Gate Source Charge
Gate Drain Charge
A: The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300
µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA
curve provides a single pulse rating.
Rev
4: Feb 2009



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