AM3406 datasheet(3/8 Pages) AITSEMI

3 / 8 page

AiT Semiconductor Inc.

www.ait-ic.com

AM3406

MOSFET

30V N-CHANNEL ENHANCEMENT MODE

REV2.0

- MAR 2011 RELEASED, APR 2019 UPDATED -

- 3 -

ABSOLUTE MAXIMUM RATINGS

TA = 25°C unless otherwise noted

VDSS, Drain-Source Voltage

30V

VGSS, Gate-Source Voltage

±20V

ID, Continuous Drain Current

TA=25°C

6.7A

TA=70°C

5.3A

IDM, Pulsed Drain CurrentNOTE1

26.8A

PD, Power Dissipation

TA=25°C

1.6W

TA=70°C

1.0W

TJ, Operation Junction Temperature

-55℃ ~ 150℃

TSTG, Storage Temperature Range

-55℃ ~ 150℃

Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and

operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not

implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

THERMAL RESISTANCE

Parameter

Symbol

Typ.

Max.

Unit

Thermal Resistance Junction to AmbientNOTE2

t≦10s

RθJA

℃/W

Thermal Resistance Junction to AmbientNOTE2,3

Steady-State

120

AM3406 データシート(PDF) 3 Page - AiT Semiconductor Inc.

AM3406 データシート(HTML) 3 Page - AiT Semiconductor Inc.

Html Pages

1 2 3 4 5 6 7 8

データシートダウンロード