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ISCN1730 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCN1730 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 Ultrafast Rectifier ISCN1730 FEATURES · Super fast switching for high efficiency · Low reverse leakage. · High forward surge current capability. · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Mainly used in switching power supply, PWM pulse width modulator,inverter as a freewheeling and other electronic circuits, high-frequency rectifier diode, diode or damping diode use ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage 600 V IF(AV) Average Rectified Forward Current 60 A IFSM Non-repetitive Peak Surge Current 250 A TJ Max.Junction Temperature 175 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.5 ℃ /W |
同様の部品番号 - ISCN1730 |
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同様の説明 - ISCN1730 |
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