QPD1016LEVB01 datasheet(3/24 Pages) QORVO

部品番号	QPD1016LEVB01

部品情報	DC – 1.7 GHz, 50 V, 500 W GaN RF Transistor

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メーカー	QORVO [Qorvo, Inc]

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QPD1016L

– 1.7 GHz, 50 V, 500 W GaN RF Transistor

Datasheet Rev. A, September 2020 | Subject to change without notice

- 3 of 23 -

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1.2

– 1.4 GHz EVB 1.3 GHz Performance 1,2

Parameter

Min

Typ

Max

Units

Linear Gain, GLIN

–

18.0

–

Output Power at 3dB compression point, P3dB

–

57.3

–

dBm

Drain Efficiency at 3dB compression point,

DEFF3dB

–

67.3

–

Gain at 3dB compression point, G3dB

–

15.0

–

Gate Leakage (VD = 10V , VG = -3.3V )

-40

Notes:

VD = +50

V, IDQ = 1000 mA, Temp = +25 °C, Pulse Width = 300 uS, Duty Cycle = 10%

Performance at 1.3 GHz in a 1.2 to 1.4 GHz Evaluation Board

RF Characterization

– Mismatch Ruggedness at 1.3 GHz 1, 2

Symbol Parameter

dB Compression

Typical

VSWR

Impedance Mismatch Ruggedness

10:1

Notes:

Test conditions unless otherwise noted: TA = 25 °C, VD = 50 V, IDQ = 1000 mA

Input drive power is determined at pulsed 3dB compression under matched condition at EVB output connector.

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