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RF5L05500CB4 データシート(PDF) 1 Page - STMicroelectronics |
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RF5L05500CB4 データシート(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() LBB 1 2 3 4 5 Pin connection Pin Connection 1 Drain A 2 Drain B 3 Source (bottom side) 4 Gate B 5 Gate A Features Order code Frequency VDD POUT Gain Efficiency RF5L05500CB4 108 MHz 50 V 500 W 19 dB 70% • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C operation • In compliance with the European directive 2002/95/EC Applications • 30-88 MHz/136-174 MHz ground communication • Plasma generator • Particle accelerator • FM and VHF TV broadcast Description The RF5L05500CB4 is a 500 W, 50 V, high performance LDMOS FET designed for multiple applications in the frequency range from HF to 500 MHz. Product status link RF5L05500CB4 Product summary Order code RF5L05500CB4 Marking 5L05500 Package LBB Packing Tape and reel 13" Base/bulk quantity 100/100 500 W, 50 V, HF to 500 MHz RF power LDMOS transistor RF5L05500CB4 Datasheet DS13379 - Rev 2 - October 2021 For further information contact your local STMicroelectronics sales office. www.st.com |
同様の部品番号 - RF5L05500CB4 |
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同様の説明 - RF5L05500CB4 |
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