DocID030318 Rev 3

7/20

L6498

Electrical characteristics

20

4

Electrical characteristics

Table 5. Electrical characteristics (VCC = 15 V; TJ = +25 °C; PGND = SGND

Symbol

Pin

Parameter

Test condition

Min. Typ. Max. Unit

Low-side section supply

VCC_hys

VCC vs.

(S)GND

VCC UV hysteresis

-

0.5

0.6

0.72

V

VCC _thON

VCC UV turn ON threshold

-

8.7

9.3

9.8

V

VCC _thOFF

VCC UV turn OFF threshold

-

8.2

8.7

9.2

V

IQCCU

Undervoltage quiescent supply

current

VCC = 7 V

LIN = GND; HIN = GND

-160

210

µA

IQCC

Quiescent current

VCC = 15 V

LIN = 5 V; HIN = GND

-340

480

µA

High-side floating section supply(1)

VBO_hys

BOOT vs.

OUT

VBO UV hysteresis

-

0.48

0.6

0.7

V

VBO_thON

VBO UV turn ON threshold

-

8.0

8.6

9.1

V

VBO_thOFF

VBO UV turn OFF threshold

-

7.5

8.0

8.5

V

IQBOU

Undervoltage VBO quiescent

current

VBO = 7 V

LIN = GND; HIN = 5 V

-20

30

µA

IQBO

VBO quiescent current

VBO = 15 V

LIN = GND; HIN = 5 V

-90

120

µA

ILK

-

High voltage leakage current

Vhvg = VOUT = VBOOT = 600 V

-

-

8

µA

RDS(on)

-

Bootstrap diode on resistance(2) --

175

-



Output driving buffers

Iso

LVG, HVG

High/low-side source short-

circuit current

LVG/HVG ON

TJ = 25 °C

1.7

2

-

A

Full temperature range

1.4

-

-

A

Isi

High/low-side sink short-circuit

current

LVG/HVG ON

TJ = 25 °C

22.5

-

A

Full temperature range

1.55

-

-

A

Logic inputs

Vil

LIN, HIN

vs. (S)GND

Low level logic threshold

voltage

-

0.95

-

1.45

V

Vih

High level logic threshold

voltage

-2

-

2.5

V

IHINh

HIN vs.

(S)GND

HIN logic “1” input bias current

HIN = 15 V

120

200

260

µA

IHINl

HIN logic “0” input bias current

HIN = 0 V

-

-

1

µA

ILINl

LIN vs.

(S)GND

LIN logic “1” input bias current

LIN = 15 V

120

200

260

µA

ILINh

LIN logic “0” input bias current

LIN = 0 V

-

-

1

µA