STF8N60DM2 datasheet(5/13 Pages) STMICROELECTRONICS

部品番号	STF8N60DM2

部品情報	N-channel 600 V, 550 mΩ typ., 8 A MDmesh™ DM2 Power MOSFET in a TO-220FP package

PDF	13 Pages

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メーカー	STMICROELECTRONICS [STMicroelectronics]

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5 / 13 page

STF8N60DM2

Electrical characteristics

DocID027864 Rev 2

5/13

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM(1)

Source-drain current

(pulsed)

VSD(2)

Forward on voltage

VGS = 0 V, ISD = 8 A

1.6

trr

Reverse recovery time

ISD = 8 A, di/dt = 100 A/µs,

VDD = 60 V (see Figure 16:

"Test circuit for inductive load

switching and diode recovery

times")

Qrr

Reverse recovery charge

188

IRRM

Reverse recovery current

4.7

trr

Reverse recovery time

ISD = 8 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C (see

Figure 16: "Test circuit for

inductive load switching and

diode recovery times")

160

Qrr

Reverse recovery charge

640

IRRM

Reverse recovery current

Notes:

(1) Pulse width is limited by safe operating area.

(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

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