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NCV8189 データシート(PDF) 2 Page - ON Semiconductor

部品番号 NCV8189
部品情報  LDO Regulator, 0.5A, High Accuracy (0.7%), Adjustable, Low Noise, High PSRR with Power Good
PDF  13 Pages
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCV8189 データシート(HTML) 2 Page - ON Semiconductor

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NCV8189
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PIN FUNCTION DESCRIPTION
Pin No.
DFNW8
Pin No.
WDFNW6
Pin
Name
Description
1, 2
1
OUT
Regulated output voltage. The output should be bypassed with small 4.7 mF ceramic
capacitor
7, 8
6
IN
Input voltage supply pin
5
4
EN
Chip enable: Applying VEN < 0.4 V disables the regulator, Pulling VEN > 1 V enables the
LDO
6
5
PG
Power Good, open collector. Use 10 kW to 100 kW pull−up resistor connected to output
or input voltage
4
3
GND
Common ground connection
3
2
FB
Adjustable output feedback pin (for adjustable version only)
3
2
SNS
Sense feedback pin. Must be connected to OUT pin on PCB (for fixed versions only)
PAD
PAD
PAD
Expose pad should be tied to ground plane for better power dissipation
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Input Voltage (Note 1)
VIN
*0.3 to 6
V
Output Voltage
VOUT
−0.3 to VIN + 0.3, max. 6
V
Chip Enable Input
VEN
*0.3 to 6
V
Power Good Voltage
VPG
*0.3 to 6
V
Power Good Current
IPG
20
mA
Output Short Circuit Duration
tSC
unlimited
s
Maximum Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
−55 to 150
°C
ESD Capability, Human Body Model (Note 2)
ESDHBM
2000
V
ESD Capability, Charged Device Model (Note 2)
ESDCDM
1000
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTIS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114)
ESD Charged Device Model tested per EIA/JESD22−C101, Field Induced Charge Model



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