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NCV8189 データシート(PDF) 2 Page - ON Semiconductor |
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NCV8189 データシート(HTML) 2 Page - ON Semiconductor |
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2 / 13 page ![]() NCV8189 www.onsemi.com 2 PIN FUNCTION DESCRIPTION Pin No. DFNW8 Pin No. WDFNW6 Pin Name Description 1, 2 1 OUT Regulated output voltage. The output should be bypassed with small 4.7 mF ceramic capacitor 7, 8 6 IN Input voltage supply pin 5 4 EN Chip enable: Applying VEN < 0.4 V disables the regulator, Pulling VEN > 1 V enables the LDO 6 5 PG Power Good, open collector. Use 10 kW to 100 kW pull−up resistor connected to output or input voltage 4 3 GND Common ground connection 3 2 FB Adjustable output feedback pin (for adjustable version only) 3 2 SNS Sense feedback pin. Must be connected to OUT pin on PCB (for fixed versions only) PAD PAD PAD Expose pad should be tied to ground plane for better power dissipation ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Input Voltage (Note 1) VIN *0.3 to 6 V Output Voltage VOUT −0.3 to VIN + 0.3, max. 6 V Chip Enable Input VEN *0.3 to 6 V Power Good Voltage VPG *0.3 to 6 V Power Good Current IPG 20 mA Output Short Circuit Duration tSC unlimited s Maximum Junction Temperature TJ 150 °C Storage Temperature TSTG −55 to 150 °C ESD Capability, Human Body Model (Note 2) ESDHBM 2000 V ESD Capability, Charged Device Model (Note 2) ESDCDM 1000 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTIS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114) ESD Charged Device Model tested per EIA/JESD22−C101, Field Induced Charge Model |
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