●

●

●

▲

◀

●

●

●

▲

◀

Symbol

Parameter

Value

Units

Drain to Source Voltage

500

V

5.0*

A

3.0*

A

Drain Current Pulsed

(Note 1)

20*

A

Gate to Source Voltage

V

Single Pulsed Avalanche Energy

(Note 2)

292

mJ

Repetitive Avalanche Energy

(Note 1)

8.75

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

5.5

V/ns

38

W

Derating Factor above 25 °C

0.3

W/°C

Operating Junction Temperature & Storage Temperature

- 55 ~ 150

°C

Maximum Lead Temperature for soldering purpose,

1/8 from Case for 5 seconds.

300

°C

Thermal Characteristics

Symbol

Parameter

Value

Units

Min.

Typ.

Max.

Thermal Resistance, Junction-to-Case

-

-

3.31

°C/W

Thermal Resistance, Junction-to-Ambient

-

-

62.5

°C/W

WFF830

Features

■

■

Gate Charge (Typical 25nC)

■

Improved dv/dt Capability, High Ruggedness

■

100% Avalanche Tested

■

Maximum Junction Temperature Range (150°C)

General Description

This Power MOSFET is produced using Wisdom’s advanced

planar stripe, DMOS technology. This latest technology has been

especially designed to minimize on-state resistance, have a high

rugged avalanche characteristics. These devices are well suited

for high efficiency switching DC/DC converters, switch mode power

supply, DC-AC converters for uninterruped power supply, motor

control.

N-Channel MOSFET

Symbol

2. Drain

3. Source

1. Gate

TO-220F

1 2

3