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TLV271 データシート(PDF) 4 Page - ON Semiconductor |
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TLV271 データシート(HTML) 4 Page - ON Semiconductor |
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4 / 26 page ![]() TLV271, TLV272, NCV272, TLV274, NCV274 www.onsemi.com 4 MAXIMUM RATINGS Symbol Rating Value Unit VDD Supply Voltage (Note 1) TLV271 TLV/NCV272/274 16.5 36 V V VID Input Differential Voltage $Supply Voltage V VI Input Common Mode Voltage Range (Note 1) −0.2 V to (VDD + 0.2 V) V II Maximum Input Current $10 mA IO Output Current Range $100 mA Continuous Total Power Dissipation (Note 1) 200 mW TJ Maximum Junction Temperature 150 °C TA Operating Ambient Temperature Range (free−air) −40 to 125 °C TSTG Storage Temperature Range −65 to 150 °C ESDHBM ESD Capability, Human Body Model 2 kV ESDCDM ESD Capability, Charged Device Model TLV271 TLV/NCV272 TLV/NCV274 TBD 2 1 kV kV kV Mounting Temperature (Infrared or Convection − 20 sec) 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functional- ity should not be assumed, damage may occur and reliability may be affected. 1. Continuous short−circuit operation to ground at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of 45 mA over long term may adversely affect reliability. Shorting output to either V+ or V− will adversely affect reliability. THERMAL INFORMATION Parameter Symbol Package Single Layer Board (Note 2) Multi−Layer Board (Note 3) Unit Junction−to−Ambient qJA TSOP−5 333 195 °C/W Micro−8 / MSOP−8 236 167 SOIC−8 190 131 SOIC−14 142 101 TSSOP−14 179 128 2. Values based on a 1S standard PCB according to JEDEC51−3 with 1.0 oz copper and a 300 mm2 copper area 3. Values based on a 1S2P standard PCB according to JEDEC51−7 with 1.0 oz copper and a 100 mm2 copper area |
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