Electrical characteristics

STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z

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Doc ID 9567 Rev 7

The built-in back-to-back Zener diodes have specifically been designed to enhance not only

the device’s ESD capability, but also to make them safely absorb possible voltage transients

that may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

-

10.5

A

ISDM

(1)

1.

Pulse width limited by safe operating area.

Source-drain current (pulsed)

-

42

A

VSD

(2)

2.

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward on voltage

ISD=10.5A, VGS=0

-

1.6

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=10.5A,

di/dt = 100A/µs,

VDD=100V, Tj=150°C

-

635

5.9

18.5

ns

µC

A

Table 8.

Gate-source zener diode

Symbol

Parameter

Test conditions

Min

Typ.

Max.

Unit

BVGSO

Gate-Source breakdown

voltage

Igs=±1mA

(Open drain)

30-

-

V