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STGIPN3HD60-H データシート(PDF) 13 Page - STMicroelectronics

部品番号 STGIPN3HD60-H
部品情報  SLLIMM-nano IPM, 3 A, 600 V 3-phase inverter bridge IGBT
PDF  21 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGIPN3HD60-H データシート(HTML) 13 Page - STMicroelectronics

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4
Shutdown function
The device is equipped with three half-bridge IC gate drivers and integrates a comparator for fault detection.
The comparator has an internal voltage reference VREF connected to the inverting input, while the non-inverting
input pin (CIN) can be connected to an external shunt resistor for current monitoring.
Since the comparator is embedded in the U IC gate driver, in case of fault it disables directly the U outputs,
whereas the shutdown of V and W IC gate drivers depends on the RC value of the external SD circuitry, which
fixes the disabling time.
For an effective design of the shutdown circuit, please refer to Application note AN4966.
Figure 6. Shutdown timing waveforms
∗
∗
∗
∗
≅
∗
_
∗
RSD and CSD external circuitry must be designed to ensure
Please refer to AN4966 for further details.
* RNTC to be considered only when the NTC is internally connected to the T/SD/OD pin.
HIN or LIN
HVG or LVG
open -drain gate
(interna l)
VREF
CI N
PROTECT ION
SD/OD
A
B
B
A
or
T/SD/OD
U
V, W
GADG250120171515FSR
STGIPN3HD60-H
Shutdown function
DS11784 - Rev 3
page 13/21



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