STGWA60V60DF datasheet(1/20 Pages) STMICROELECTRONICS

部品番号	STGWA60V60DF

部品情報	Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

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メーカー	STMICROELECTRONICS [STMicroelectronics]

ホームページ	http://www.st.com

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1 / 20 page

This is information on a product in full production.

September 2016

DocID024154 Rev 7

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20

STGW60V60DF, STGWA60V60DF

STGWT60V60DF

Trench gate field-stop IGBT, V series

600 V, 60 A very high speed

Datasheet

- production data

Figure 1. Internal schematic diagram

Features

• Maximum junction temperature: TJ = 175 °C

• Tail-less switching off

• VCE(sat) = 1.85 V (typ.) @ IC = 60 A

• Tight parameter distribution

• Safe paralleling

• Low thermal resistance

• Very fast soft recovery antiparallel diode

Applications

• Photovoltaic inverters

• Uninterruptible power supply

• Welding

• Power factor correction

• Very high frequency converters

Description

These devices are IGBTs developed using an

advanced proprietary trench gate field-stop

structure. These devices are part of the V series

of IGBTs, which represents an optimum

compromise between conduction and switching

losses to maximize the efficiency of very high

frequency converters. Furthermore, a positive

VCE(sat) temperature coefficient and very tight

parameter distribution result in safer paralleling

operation.

C (2 or TAB)

G (1)

E (3)

TO-247

1

2

3

TO-3P

1

2

3

TAB

TO-247 long leads

Table 1. Device summary

Order code

Marking

Package

Packing

STGW60V60DF

GW60V60DF

TO-247

Tube

STGWA60V60DF

G60V60DF

TO-247 long leads

Tube

STGWT60V60DF

GWT60V60DF

TO-3P

Tube

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同様の部品番号 - STGWA60V60DF

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同様の説明 - STGWA60V60DF

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