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T1250-8G データシート(PDF) 5 Page - STMicroelectronics |
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T1250-8G データシート(HTML) 5 Page - STMicroelectronics |
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5 / 16 page ![]() Figure 5. On-state characteristics (maximum values) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 10 100 I (A) TM V (V) TM T max. V = 0.85V R = 35 m j to d Ω T = j T max. j T = 25°C j . Figure 6. Surge peak on-state current versus number of cycles 1 10 100 1000 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Numb er o f cycles t=20ms One cycle Non repetitive T initial = 25°C j Repetitive T = 90°C C ITSM(A) Figure 7. Non repetitive surge peak on-state current for a sinusoidal pulse 0.01 0.10 1.00 10.00 10 100 1000 T initial = 25°C j ITSM dI/dt limitation: 50A/µs ITSM(A) tP(ms) for a sinusoidal pulse with width tP < 10 ms Figure 8. Relative variation of gate trigger current holding current and latching current versus junction temperature (typical values) -40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 IGT IH & IL Tj(°C) IGT, IH, IL[Tj] / IGT, IH, IL[Tj = 25 °C] BTA12, BTB12, T1205, T1210, T1235, T1250 Characteristics (curves) DS2115 - Rev 12 page 5/16 |
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